Zhengyuan Zhang

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This paper focused on special requirement of low on-resistance of VDMOS in BCD process. VDMOS structure and its process were studied, and a method for decreasing on-resistance of VDMOS was developed. In this method, a 10 µm deep trapezia ring was formed on the N+ ring of D electrode of VDMOS, and a few more steps were added to ordinary BCD process.(More)
In this paper, we discuss the emission of visible light by a monolithically integrated silicon gate-controlled diode with the p-n junction reverse-biased. Since the MOS-like diode utilizes the field effect to modulate the optical output, the modulation speed will benefit from this mechanism. Hence, a silicon gate-controlled diode structure for optical(More)
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