Zaibing Guo

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Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that(More)
A high density cross-point (CP) MRAM is presented. The CP MRAM comprises two guided synthetic-anti-ferromagnetic (SAF) tri-layers. The SAF tri-layer with higher stiffness serves as the recording layer, and another SAF tri-layer with lower stiffness serves as the reading layer. The easy axis of the recording layer is perpendicular to that of the reading(More)
The continuing scaling of magnetic recording is facing more and more scientific and technological challenges because both the read sensor and recording bit are approaching sub-50 nm regime with the ever increasing areal density in hard disk drives. One of the key and indispensable elements for both high-sensitivity sensors and high-density media is the(More)
We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that(More)
The magnetic and electrical properties as well as the structural characteristics have been studied on a series of samples with structure substrate (Sub)/SV(I)/A120 35nm/SV(2). Here, SV(l) is either CoFe/IrMn based spin-valve (SV) such as Ta5/NiFe2/IrMn8/CoFe2/Cu2.6/CoFe2/Ta5 (thicknesses are in nanometers) bottom SV or Ta5/NiFe2/CoFe l.5/Cu2.6/CoFe2/FeMn(More)
The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The reading operation of the MRAM with different sensing schemes and cell array structures is discussed, in particular the reference resistance generating schemes which are introduced to maximize the cell efficiency and reading(More)
Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory(More)
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