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Rectifying characteristic of perovskite oxide La1.89Ce0.11CuO4/Ba0.5Sr0.5TiO3/La0.67Sr0.33MnO3 heterostructures
Heterostructure composed of electron-doped high-Tc superconductor La1.89Ce0.11CuO4 (LCCO), ferroelectric Ba0.5 Sr0.5 TiO3 (BST) and colossal magnetoresistance (CMR) La0.67 Sr0.33 MnO3 (LSMO) thinExpand
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Branched SnO2 nanowires on metallic nanowire backbones for ethanol sensors application
We report the synthesis of hierarchically branched semiconducting SnO2 nanowire on metallic Sb-doped SnO2 nanowires by the sequential seeding of multiple nanowire generations with Au nanoparticles asExpand
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Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition
High-efficient ZnO-based nanorod array light-emitting diodes (LEDs) were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectivelyExpand
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Spectral response of long-period fiber gratings to cladding refractive index perturbation
Abstract. The spectral response of long-period fiber gratings can be tailored by the cladding index perturbation (C-LPFGs) induced by written methods. Here, we investigate theoretically the effectsExpand
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As-doped p-type ZnO films prepared by cosputtering ZnO and Zn3As2 targets
Abstract p-Type ZnO:As films with hole concentration of 10 16 –10 17  cm −3 were deposited on glass substrates by cosputtering method with ZnO and Zn 3 As 2 targets. Proper annealing may change theExpand
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Slanted n-ZnO nanorod arrays/p-GaN light-emitting diodes with strong ultraviolet emissions
Both of oblique angle deposition and conventional deposition techniques were used by a RF sputtering system to grow the slanted (β = 32°) and planar (β = 0°) n-ZnO films on p-GaN, respectively. TheseExpand
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Dependence of conduction type of ZnO films prepared by sputtering a Zn3As2/ZnO target on substrate temperature and thermal treatment
Abstract ZnO films were deposited on glass substrates by sputtering a Zn 3 As 2 /ZnO target using radio frequency (rf) magnetron sputtering. XRD was used to analyze the crystal orientation of ZnOExpand
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To develop high-quality film device with good reliability, it is often essential to be able to evaluate the parameters such as stress, the biaxial elastic modulus, and coefficient of thermalExpand