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A Compact Spice Model with Verilog-A for Phase Change Memory
A compact spice model of the phase change memory with the crystalline fraction as the switching by Verilog-A language is proposed and demonstrated. The model can simulate not only the resistanceExpand
Synthesis and low-temperature photoluminescence properties of SnO2 nanowires and nanobelts.
The SnO2 nanobelts show similar photoluminescence behaviours and the origin of the luminescence is discussed, and the vapour-liquid-solid growth mechanism is proposed. Expand
Ceria concentration effect on chemical mechanical polishing of optical glass
Abstract It was found material removal rate (MRR) sharply increased from 250 to 675 nm/min as the concentration decreased from 1 to 0.25 wt% in optical glass chemical mechanical polishing (CMP) usingExpand
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
An alloying strategy to speed up the crystallization kinetics of scandium-doped antimony telluride is demonstrated, paving the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems. Expand
An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell
In this letter, an 8-Mb phase-change random access memory (PCRAM) chip has been developed in a 130-nm 4-ML standard CMOS technology based on a Resistor-on-Via-stacked-Plug (RVP) storage cellExpand
Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
Carbon-doped Ge2Sb2Te5 material is proposed for high-density phase-change memories. The carbon doping effects on electrical and structural properties of Ge2Sb2Te5 are studied by in situ resistanceExpand
Particle size and surfactant effects on chemical mechanical polishing of glass using silica-based slurry.
The main polishing mechanism was changed from indentation mechanism to surface-area mechanism, with the variation of particle size, and the molecular structure, charge type, and lubricating effect of the surfactants play an important role in the dispersion of abrasive particles and in the CMP performance. Expand
General Flame Approach to Chainlike MFe2O4 Spinel (M = Cu, Ni, Co, Zn) Nanoaggregates for Reduction of Nitroaromatic Compounds
Unique chainlike MFe2O4 (M = Cu, Ni, Co, and Zn) nanoaggregates (NAs) have been prepared by facile flame spray pyrolysis of nitrates/ethanol precursor. Synthesized MFe2O4 are composed of primaryExpand
Ni-doped GST materials for high speed phase change memory applications
Abstract In this paper, Ni-doped Ge 2 Sb 2 Te 5 (GST) was investigated for high speed phase change memory applications. Compared with GST, Ni 0.3 Ge 2.8 Sb 2.2 Te 4.7 film exhibits a higherExpand
Preparation and characterization of MgO thin films by a simple nebulized spray pyrolysis technique
A simple nebulized spray pyrolysis method has been applied to prepare MgO thin films with (200) preferential orientation on (100) Si substrates by using magnesium acetate as starting reactants. TheExpand