Z. Liliental-Weber

Publications
Influence

Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2

I. Sharp, D. O. Yi, +8 authors E. Haller
Materials Science
2 February 2005

Ion-beam-synthesized {sup 74}Ge nanocrystals embedded in an amorphous silica matrix exhibit large compressive stresses in the as-grown state. The compressive stress is determined quantitatively by… Expand

Native point defects in low‐temperature‐grown GaAs

X. Liu, A. Prasad, J. Nishio, E. Weber, Z. Liliental-Weber, W. Walukiewicz
Materials Science
10 July 1995

We present structural and electronic data which indicate that the dominant defects in GaAs grown at low temperatures (LT GaAs) by molecular beam epitaxy (MBE) are As antisites (AsGa) and Ga vacancies… Expand

Formation Mechanism of Nanotubes in GaN

Z. Liliental-Weber, Y. Chen, S. Ruvimov, J. Washburn
Materials Science
1 October 1997

A formation mechanism for so-called nanotube defects in GaN is proposed. It is shown that two related types of defects are formed: nanotubes and pinholes. Both start with V shaped facets on… Expand

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

M. Luysberg, Hyunchul Sohn, +5 authors R. Krause‐Rehberg
Materials Science
4 June 1998

The controlled incorporation of excess As into GaAs grown by molecular beam epitaxy at low growth temperatures (LT-GaAs) is explored. The substrate temperature and the As/Ga flux ratio were… Expand

Inversion domains in AlN grown on (0001) sapphire

Jacek B. Jasinski, Z. Liliental-Weber, Q. Paduano, D. Weyburne
Physics
30 September 2003

Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN… Expand

Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition

Z. Liliental-Weber, M. Benamara, +6 authors R. Dupuis
Physics
23 December 1999

Defects were observed in GaN:Mg grown on sapphire substrates using metal–organic chemical-vapor deposition (MOCVD) with Mg-delta doping similar to those previously observed in bulk GaN:Mg grown from… Expand

Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques

K. Yu, M. Kamińska, Z. Liliental-Weber
Chemistry
1 October 1992

The stoichiometry, crystallinity, defect concentration, and the excess As lattice location in GaAs layers grown by molecular beam epitaxy at low growth temperatures (≤300 °C) were studied using ion… Expand

Self-forming InAs/GaP quantum dots by direct island growth

R. León, C. Lobo, +5 authors M. A. S. Kalceff
Physics
20 July 1998

InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer–Weber) rather than Stranski–Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs… Expand

Structural properties of free-standing 50 mm diameter GaN wafers with (101_0) orientation grown on LiAlO2

Jacek B. Jasinski, Z. Liliental-Weber, +5 authors S. Brown
Materials Science
27 September 2005

(10{und 1}0) GaN wafers grown on (100) face of {gamma}-LiAlO{sub 2} were studied using transmission electron microscopy. Despite good lattice matching in this heteroepitaxial system, high densities… Expand

V-shaped inversion domains in InN grown on c-plane sapphire

J. Jasinski, Z. Liliental-Weber, H. Lu, W. Schaff
Physics
8 July 2004

Inversion domains with a V-shape were found to nucleate inside a Mg-doped InN heteroepitaxial layer. They resemble Al-polarity domains, observed recently, in N-polarity AlN films. However, the angle… Expand

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