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Impact of phonon-surface roughness scattering on thermal conductivity of thin si nanowires.
A frequency-dependent phonon scattering rate is computed from perturbation theory and related to a description of the surface through the root-mean-square roughness height Delta and autocovariance length L, and a quadratic dependence of thermal conductivity on diameter and roughness is found.
Ballistic to diffusive crossover of heat flow in graphene ribbons.
These results show how manipulation of two-dimensional device dimensions and edges can be used to achieve full control of their heat-carrying properties, approaching fundamentally limited upper or lower bounds.
Anisotropy and boundary scattering in the lattice thermal conductivity of silicon nanomembranes
We present a calculation of the full thermal conductivity tensor for 001, 111, and 011 surface orientations of the silicon-on-insulator SOI nanomembrane, based on solving the Boltzmann transport
Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires.
The effect of NW surface roughness on thermal conductivity is derived from perturbation theory and appears as an efficient way to scatter phonons in Si, Ge, and GaAs NWs with diameter D < 200 nm.
Thermal transport in graphene nanoribbons supported on SiO2
We present a theoretical model for thermal transport in graphene nanoribbons (GNRs) on SiO2 based on solving the phonon Boltzmann transport equation. Thermal transport in supported GNRs is
Lattice Thermal Conductivity of the Binary and Ternary Group-IV Alloys Si-Sn, Ge-Sn, and Si-Ge-Sn
Being a good thermoelectric material is a balancing act between high electrical conductivity $\ensuremath{\sigma}$ and low thermal conductivity $\ensuremath{\kappa}$, because both quantities depend
Lattice thermal conductivity of graphene nanoribbons: Anisotropy and edge roughness scattering
We present a calculation of the thermal conductivity of graphene nanoribbons GNRs, based on solving the Boltzmann transport equation with the full phonon dispersions, a momentum-dependent model for
Quantitative determination of contributions to the thermoelectric power factor in Si nanostructures.
The underlying mechanisms for the power factor in the nanoribbon are identified, which include quantum confinement, low scattering due to the absence of dopants, and, at low temperatures, a significant phonon-drag contribution.
Coupled electro-thermal simulation of MOSFETs
Thermal transport in metal-oxide-semiconductor field effect transistors (MOSFETs) due to electron-phonon scattering is simulated using phonon generation rates obtained from an electron Monte Carlo