Z.-j. Yang

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We propose and demonstrate a novel III-Nitride high-power robust RF switch using SiO/sub 2/-AlGaN-GaN metal-oxide-semiconductor heterojunction (MOSH) capacitors. A metal electrode deposited on the top of the SiO/sub 2/ layer and the low-resistivity two-dimensional electron gas (2DEG) channel at the AlGaN-GaN interface serve as the MOSH capacitor plates. Two(More)
This letter proposes a novel approach to fabricate high-performance heterostructure microwave devices with nonohmic contacts. The contact can be as-deposited or made by "shallow" low-temperature annealing to form a low-height Schottky barrier while preserving the two-dimensional electron-gas layer (2DEG) at the heterointerface. Coupling between the metal(More)
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