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Self-assembled quantum dots and wires were obtained in the In x Ga 1-x As/GaAs and InAs/In 0.52 Al 0.48 As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some(More)
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