Z . D . Kvon

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We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behaviour upon variation of the radiation polarization state, wavelength, gate voltage, and temperature is studied. We present the microscopic and(More)
J. Karch,1 S. A. Tarasenko,2 E. L. Ivchenko,2 J. Kamann,1 P. Olbrich,1 M. Utz,1 Z. D. Kvon,3 and S. D. Ganichev1 1Terahertz Center, University of Regensburg, D-93040 Regensburg, Germany 2Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia 3Institute of Semiconductor Physics, Russian Academy of Sciences, 630090(More)
P. Olbrich,1 C. Zoth,1 P. Vierling,1 K.-M. Dantscher,1 G. V. Budkin,2 S. A. Tarasenko,2 V. V. Bel’kov,2 D. A. Kozlov,3 Z. D. Kvon,3 N. N. Mikhailov,3 S. A. Dvoretsky,3 and S. D. Ganichev1 1Terahertz Center, University of Regensburg, 93040 Regensburg, Germany 2A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia(More)
We study the transport properties of HgTe-based quantum wells containing simultaneously electrons and holes in a magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in(More)
We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of μ ∼ 4 × 10(5) cm(2)/V · s. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of(More)
T. Herrmann,1 I. A. Dmitriev,2,3 D. A. Kozlov,4,5 M. Schneider,1 B. Jentzsch,1 Z. D. Kvon,4,5 P. Olbrich,1 V. V. Bel’kov,3 A. Bayer,1 D. Schuh,1 D. Bougeard,1 T. Kuczmik,1 M. Oltscher,1 D. Weiss,1 and S. D. Ganichev1 1Terahertz Center, University of Regensburg, 93040 Regensburg, Germany 2Max Planck Institute, 70569 Stuttgart, Germany 3Ioffe Institute,(More)
W. Weber,1 L. E. Golub,2 S. N. Danilov,1 J. Karch,1 C. Reitmaier,1 B. Wittmann,1 V. V. Bel’kov,2 E. L. Ivchenko,2 Z. D. Kvon,3 N. Q. Vinh,4 A. F. G. van der Meer,4 B. Murdin,5 and S. D. Ganichev1,* 1Terahertz Center, University of Regensburg, 93040 Regensburg, Germany 2A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St.(More)
Nonlocal resistance is studied in a two-dimensional system with a simultaneous presence of electrons and holes in a 20 nm HgTe quantum well. A large nonlocal electric response is found near the charge neutrality point in the presence of a perpendicular magnetic field. We attribute the observed nonlocality to the edge state transport via counterpropagating(More)
K.-M. Dantscher,1 D. A. Kozlov,2,3 P. Olbrich,1 C. Zoth,1 P. Faltermeier,1 M. Lindner,1 G. V. Budkin,4 S. A. Tarasenko,4,5 V. V. Bel’kov,4 Z. D. Kvon,2,3 N. N. Mikhailov,2 S. A. Dvoretsky,2 D. Weiss,1 B. Jenichen,6 and S. D. Ganichev1,* 1Terahertz Center, University of Regensburg, 93040 Regensburg, Germany 2A.V. Rzhanov Institute of Semiconductor Physics,(More)
P. Olbrich,1 S. A. Tarasenko,2 C. Reitmaier,1 J. Karch,1 D. Plohmann,1 Z. D. Kvon,3 and S. D. Ganichev1 1Terahertz Center, University of Regensburg, 93040 Regensburg, Germany 2A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia 3Institute of Semiconductor Physics, Russian Academy of Sciences, 630090(More)