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High-performance passive components are keys to reach system-on-a-chip (SOC) solution of mixed-signal and radio frequency (RF) circuit design. This paper presents the fabrication and integration of high performance mixed-signal and RF passive components using industrial standard 0.13/spl mu/m Cu BEOL technologies. On-chip inductor with 6/spl mu/m(More)
The capacitance density of industrial low-cost metal-insulator-metal (MIM) capacitor in Cu back-end-of-line (BEOL) technologies has been improved to 1.5 fF//spl mu/m/sup 2/ which is 50% higher than the current foundry standard of 1.5 fF//spl mu/m/sup 2/ based in J. C. Guo et al. (2003), P. Zurcher et al. (2002) and C. H. Ng et al. (2002). In this paper, we(More)
In this paper we present a virtual strained silicon substrate, full relaxed SiGe-on-insulator (SGOI)(Ge% = 15%) structure with stepwise buffer layers and high quality box layer, fabricated by separation by implantation of oxygen (SIMOX) technique. The Ge condensation effect of the top SiGe layer is found and its dependence on the SIMOX parameters is also(More)
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