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Self-heating is a growing concern for thin-body devices. In this paper, we discuss the impact of self-heating on TDDB using uniform and non-uniform gate dielectric stress. We show lifetime reduction with increasing drain voltages consistent with elevated temperature stress. It is also shown that the power law dependence to gate voltage is preserved at(More)
This work presents a new experimental setup to perform highly accelerated Time Dependent Dielectric Breakdown (TDDB) in constant voltage stress (CVS) mode with capability of collecting failure distributions in sub millisecond regime. The new apparatus is capable of collecting failure times down to tens of microseconds and we demonstrate that power law(More)
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