Yvon Cordier

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This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps located under the conduction band. A model is proposed to(More)
The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of traps in the GaN channel and the ohmic contacts. These effects(More)
Acknowledgement This manuscript is an outcome of my research within the group of " Nanostructures and Semiconductor " at Institute for Nanoscience and Cryogenics at CEA-Grenoble, France. For three years I had a chance to meet and to work with researchers who have a passion to science, hence it is a pleasure for me to express my most profound appreciation to(More)
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications UPR 10 du Centre National de la Recherche Scientifique Sophia Antipolis – Valbonne présentée et soutenue publiquement par Dans ce mémoire, après une description de mon parcours dans la recherche, depuis la thèse jusqu'à ce jour, sont présentées les principales composantes d'une structure HEMT(More)
This paper reports RF losses and buffer isolation analysis of AlGaN/GaN epitaxial layers grown on high resistive Si(111) substrate with different GaN buffer thicknesses. Measurements are performed at different temperatures. At 85°C, measurements exhibit very low isolation current down to 80 nA/mm between two ohmic contacts biased at 180 V and(More)
This paper shows the capability of AlGaN/GaN high electron mobility transistors (HEMTs) on (001) oriented silicon substrate with 300 nm gate length using unstuck Gamma gate for low cost device microwave power applications. The total gate periphery of 300 mum, exhibits a maximum DC drain current density of 600 mA/mm at VDS=7V with an extrinsic(More)
This paper shows the capability of AlGaN/GaN high electron mobility transistors (HEMTs) with 0.1 mum gamma shaped gate length on (001) oriented silicon substrate for microwave power applications. The gate technology is based on silicon nitride thin film and uses a digital etching to perform the recess through the SiN mask. Output current densities of 420(More)