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Ž. Thin films of cubic SiC have been prepared on Si 001 substrates in situ by high vacuum metal-organic chemical vapor Ž. deposition HVMO-CVD method using a single source precursor at various growth temperatures in the range of 300᎐1000ЊC. Ž. 1,3-Disilabutane, H Si-CH-SiH-CH DSB that contains the same amount of silicon and carbon atoms in the same molecule(More)
The structural changes and electrochemical behavior of RuO2 are investigated by using in situ XRD, X-ray absorption spectroscopy, and electrochemical techniques to understand the electrochemical reaction mechanism of this metal oxide anode material. Intermediate phase-assisted transformation of RuO2 to LiRuO2 takes place at the start of discharge. Upon(More)
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