Yun Ki Lee

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The array of synthetic antiferromagnetic magnetic tunnel junctions (MTJs) consisting of the TiN/PtMn (15 nm)/CoFe (1.5 nm)/Ru (0.8 nm)/CoFe (1.5 nm)/AlO (1.2 nm)/NiFe (t/sub 1/ nm)/Ru (0.8 nm)/NiFe (t/sub 2/ nm)/Ta (10 nm)/TiN structure was fabricated into submicrometer dimensions. Magnetization switching field and magnetic domain structure were(More)
As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 /spl mu/m/spl times/0.8 /spl mu/m, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/NiFe t (t=3,4.5, and 6 nm). Both at-field(More)
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