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Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bonding semiconductor power chips, such as the power insulated gated bipolar transistor (IGBT). However, for the traditional method of bonding IGBT chips, an external pressure of a few MPa is reported necessary for the sintering time of ~1 h. In order to(More)
Tension, single-step creep, and multi-step creep of rat skins at room temperature were experimentally studied. We studied the effects of loading histories of high stress creep, low stress creep, and stress relaxation on multi-step creep. Microstructure of rat skins after prescribed tests were observed microscopically with the help of standard hematoxylin(More)
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