Yukio Makino

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We describe a 60-GHz coplanar MMIC low-noise amplifier (LNA) using 0.1 /spl mu/m-gate-length InP heterojunction FETs (HJFETs). An optimum gate width of 80 /spl mu/m was determined for the first stage FET by using a small signal model including accurate scaling of the gate resistance. On-wafer noise measurements demonstrated a noise figure of 2.2 dB and a(More)
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