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—Silicon-on-insulator (SOI) technology is being investigated for monolithic pixel device fabrication. The SOI wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOI (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel(More)
People usually develop different kinds of compensated gait in response to local function deficits, such as muscle weakness, spasticity in specific muscle groups, or joint stiffness, in order to overcome the falling risk factors. Compensated walking has been analysed empirically in the impaired gait analysis area. However, the compensation could be(More)
Truly monolithic pixel detectors were fabricated with 0:2 μm SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on a thin SOI layer and connected to diodes formed in the silicon handle wafer through the buried oxide layer. We(More)
Abstract– We are developing monolithic pixel devices utilizing a 0.2 μm Fully Depleted Silicon-on-Insulator (FD-SOI) process technology provided by OKI Semiconductor. We have investigated thinning the devices to 100 μm. Thinning enhances the feature of monolithic SOI sensors in views of minimizing the overall material and realizing full depleted devices.(More)
Silicon-on-insulator (SOl) technology is being investigated for monolithic pixel device fabrication. The SOl wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOl (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel(More)
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