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The deep submicron (DSM) semiconductor technologies will make the worst-case design impossible, since they can not provide design margins that it requires. Research directions should go to typical-case design methodologies, where designers are focusing on typical cases rather than worrying about very rare worst cases. In this paper, canary logic is proposed(More)
—Negative Bias Temperature Instability (NBTI) is one of the major reliability problems in advanced technologies. NBTI causes threshold voltage degradation in a PMOS transistor which is biased to negative voltage. In an SRAM cell, due to NBTI, threshold voltage degrades in the load PMOS transistors. The degradation has the impact on Static Noise Margin(More)
This paper proposes an energy efficient processor which can be used as a design alternative for the dynamic voltage scaling (DVS) processors in embedded system design. The processor consists of multiple PE (processing element) cores and a selective set-associative cache memory. The PE-cores have the same instruction set architecture but differ in their(More)
The deep sub micron semiconductor technologies increase parameter variations. The increase in parameter variations requires excessive design margin that has serious impact on performance and power consumption. In order to eliminate the excessive design margin, we are investigating canary Flip-Flop (FF). Canary FF requires additional circuits consisting of(More)
According to the current trend of increasing variations in process technologies and thus in performance, the conservative worst-case design will not work since design margins can not be provided. We are investigating a typical-case design methodology, where designers focus on typical cases rather than on rarely-occurring worst cases. On evaluating the(More)
* The preliminary results of this study were presented as a fast abstract at PRDC 2010 [1]. Abstract The aggressive technology scaling brings us new challenges, such as parameter variations, soft errors, and device wearout. They increase unreliability of transistors and thus will become a serious problem in SoC designs. To attack these problems, spatial(More)
Negative Bias Temperature Instability (NBTI) is one of the dominant factors determining a device lifetime. NBTI causes a threshold voltage shift on a PMOS transistor. Modern LSI often has large on-chip SRAMs such as cache memories. NBTI affects the SRAM cell as degradation in Static Noise Margin (SNM), which is a measure of the read stability of the cell.(More)