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Quantum condensation of electron-hole (e-h) systems in photoexcited semiconductors is reviewed from a theoretical viewpoint, stressing the exciton Bose-Einstein condensation (BEC), the e-h BCS-type condensed state, the exciton Mott transition, and the biexciton crystallization. First, we discuss the crossover between the exciton BEC and the e-h BCS states(More)
Yuhei Miyauchi,1,2,3,* Zhengyi Zhang,4,5 Mitsuhide Takekoshi,6 Yuh Tomio,7 Hidekatsu Suzuura,7 Vasili Perebeinos,8,9 Vikram V. Deshpande,10,11 Chenguang Lu,12,13 Stéphane Berciaud,14 Philip Kim,11 James Hone,4 and Tony F. Heinz3,† 1Institute of Advanced Energy, Kyoto University, Gokasho, Uji 611-0011, Japan 2Graduate School of Science, Nagoya University,(More)
To understand the essence of the exciton Mott transition in three-dimensional electron-hole systems, the metalinsulator transition is studied for a two-band Hubbard model in infinite dimensions with interactions of electronelectron (hole-hole) repulsion U and electron-hole attraction −U . By using the dynamical mean-field theory, the phase diagram in the U(More)
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