Yuguang Gong

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An array of transfer length mode (TLM) structures were designed and made on electrically isolated phosphourous -doped hydrogenated amorphous silicon (a-Si:H) thin films. Annealing effects on NiCr/a-Si:H contacts in the temperature rang from 100 °C to 400°C were studied. Electrical measurements were performed to characterize the interaction of(More)
The structure of hydrogenated amorphous silicon (a-Si:H) thin films embedded with nano-crystal grains deposited by conventional radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) through decomposition of silane diluted with argon has been studied by X-ray diffraction (XRD), Fourier transform infrared (FTIR) and Raman spectroscopy. It is(More)
The structure and properties of thin films obtained by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) through decomposition of silane mixed with argon have been studied by Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, ultraviolet and visible (UV-vis) spectroscopy and transmission electron microscope (TEM),(More)
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