Yufei Wu

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power DC stress. We have identified two degradation mechanisms that take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate(More)
  • 1