Learn More
– We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power stress. We found that two degradation mechanisms take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate a new(More)
Three hundred and seventy-six middle school students in Wenchuan County were assessed three and one-half years after the Wenchuan earthquake to examine the effects of rumination on posttraumatic stress disorder (PTSD) and posttraumatic growth (PTG). The results revealed that recent intrusive ruminations partly mediated the relationship between intrusive(More)
— Recent advances in the fabrication technology have yielded nanometer-scale InGaAs quantum-well (QW) MOSFETs with extremely low and reproducible external contact and access region resistances. This allows, for the first time, a detailed analysis of the role of ballistic transport in the operation of these devices. This paper presents a systematic analysis(More)
Cardiac arrhythmias are among the most common causes of death in the world. Foundational studies established the critical role of ion channel disorders in arrhythmias, yet defects in ion channels themselves, such as mutations, may not account for all arrhythmias. Despite the progress made in recent decades, the antiarrhythmic drugs currently available have(More)
GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract(More)
— This letter presents a self-aligned InGaAs quantum-well MOSFET with a transconductance, g m,max , of 3.45 mS/µm at V ds = 0.5 V. This is a record value among III–V FETs of any kind, including MOSFETs and HEMTs, and represents an improvement of over 10% with respect to the previous record on planar devices. This result was achieved by redesigning the(More)
— We developed an integrative spiking neuron framework to study motor learning and control across multiple levels of biological organisations from synaptic learning rules via neural populations and muscles to an arm's movements. Our framework is designed to simulate reward-based motor learning processes by using identified cellular learning mechanisms(More)
We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power DC stress. We have identified two degradation mechanisms that take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate(More)
1 Cold-inducible RNA-binding protein (CIRP) is an 18-kDa protein consisting of an amino-terminal RNA-binding domain and a carboxyl-terminal glycine-rich domain. The expression of Cirp was first identified in murine germ cells, a cell type naturally exposed to temperatures lower than body temperature. 2 Subsequent studies reveal that Cirp is expressed in a(More)
The evaluation of signal detection algorithm involves two aspects: computational complexity and performance. Based on the statistical covariances of the signal, the well-known spectrum sensing algorithm named as maximum-to-minimum ratio eigenvalue (MME) algorithm was proposed in [1]. MME is a blind signal detection algorithm and it has good performance. The(More)