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We have investigated the role of temperature in the degradation of GaN HighElectron-Mobility-Transistors (HEMTs) under high-power stress. We found that two degradation mechanisms take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate a new scheme(More)
Recent advances in the fabrication technology have yielded nanometer-scale InGaAs quantum-well (QW) MOSFETs with extremely low and reproducible external contact and access region resistances. This allows, for the first time, a detailed analysis of the role of ballistic transport in the operation of these devices. This paper presents a systematic analysis of(More)
Three hundred and seventy-six middle school students in Wenchuan County were assessed three and one-half years after the Wenchuan earthquake to examine the effects of rumination on posttraumatic stress disorder (PTSD) and posttraumatic growth (PTG). The results revealed that recent intrusive ruminations partly mediated the relationship between intrusive(More)
The evaluation of signal detection algorithm involves two aspects: computational complexity and performance. Based on the statistical covariances of the signal, the well-known spectrum sensing algorithm named as maximum-to-minimum ratio eigenvalue (MME) algorithm was proposed in [1]. MME is a blind signal detection algorithm and it has good performance. The(More)
We developed an integrative spiking neuron framework to study motor learning and control across multiple levels of biological organisations from synaptic learning rules via neural populations and muscles to an arm’s movements. Our framework is designed to simulate reward-based motor learning processes by using identified cellular learning mechanisms(More)
The characteristic brain pathology and motor and nonmotor symptoms of Parkinson's disease (PD) are well established. However, the details regarding the causes of the disease and its course are much less clear. Animal models have significantly enriched our current understanding of the progression of this disease. Among various neurotoxin-based models of PD,(More)
This letter presents a self-aligned InGaAs quantumwell MOSFET with a transconductance, gm,max, of 3.45 mS/μm at Vds = 0.5 V. This is a record value among III–V FETs of any kind, including MOSFETs and HEMTs, and represents an improvement of over 10% with respect to the previous record on planar devices. This result was achieved by redesigning the access(More)
We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power DC stress. We have identified two degradation mechanisms that take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate(More)
Previous literature shows that contracting frictions may preclude valuable cooperation between innovators and commercializers in Markets for Technology. This literature, however, does not address the question of how large the implied inefficiency is. Focusing on licensing-based cooperation in the pharmaceutical industry and the enactment of the Medicare(More)