Yufei Wu

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– We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power stress. We found that two degradation mechanisms take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate a new(More)
— Recent advances in the fabrication technology have yielded nanometer-scale InGaAs quantum-well (QW) MOSFETs with extremely low and reproducible external contact and access region resistances. This allows, for the first time, a detailed analysis of the role of ballistic transport in the operation of these devices. This paper presents a systematic analysis(More)
— This letter presents a self-aligned InGaAs quantum-well MOSFET with a transconductance, g m,max , of 3.45 mS/µm at V ds = 0.5 V. This is a record value among III–V FETs of any kind, including MOSFETs and HEMTs, and represents an improvement of over 10% with respect to the previous record on planar devices. This result was achieved by redesigning the(More)
GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract(More)
We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power DC stress. We have identified two degradation mechanisms that take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate(More)
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