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Series resistance of silicided ohmic contacts for nanoelectronics
The electrical behavior of shallow silicide-to-silicon ohmic contacts has been evaluated for lateral dimensions to 50 nm. Trench-isolated series resistance test structures were fabricated usingExpand
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Ultra-low resistance W/Si/sub 1-x/Ge/sub x//Si source-drain contacts
Fabrication of CMOS devices with feature sizes on the order of 100 nm will require junction depths of less than 70 nm in order to control short-channel effects. Fully-scaled 100x100 nm/sup 2/Expand