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- Publications
- Influence
Series resistance of silicided ohmic contacts for nanoelectronics
- Yuen-Shung Chieh, A. Perera, J. Krusius
- Materials Science
- 1 August 1992
The electrical behavior of shallow silicide-to-silicon ohmic contacts has been evaluated for lateral dimensions to 50 nm. Trench-isolated series resistance test structures were fabricated using… Expand
Low-Resistance B andgap-Engineered W/Sil _,Ge,/Si Contacts
- Yuen-Shung Chieh, J. Krusius, D. Green, Mehmet Oztiirk
- Materials Science
- 1996
Ultra-low resistance W/Si/sub 1-x/Ge/sub x//Si source-drain contacts
- Yuen-Shung Chieh, J. Krusius, D. Green, M. Ozturk
- Materials Science
- 53rd Annual Device Research Conference Digest
- 19 June 1995
Fabrication of CMOS devices with feature sizes on the order of 100 nm will require junction depths of less than 70 nm in order to control short-channel effects. Fully-scaled 100x100 nm/sup 2/… Expand
Dopant Implantation and Activation in Polycrystalline-SiGe
- W. Edwards, Yuen-Shung Chieh, S. Lin, D. Ast, J. Krusius, T. Kamins
- Materials Science
- 1994