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—Emerging non-volatile memories (NVM) based on re-sistive switching mechanism (RS) such as STT-MRAM, OxRRAM and CBRAM etc., are under intense R&D investigation by both academics and industries. They provide high write/read speed, low power and good endurance (e.g.,) beyond mainstream NVMs, which allow them to be embedded directly with logic units for(More)
—Magnetic tunnel junctions (MTJs) composed of fer-romagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips owing to its scalability potential together with high thermal stability. Recent progress has demonstrated a capacity for high-speed performance and low power(More)
—Advanced computing systems suffer from high static power due to the rapidly rising leakage currents in deep sub-mi-cron MOS technologies. Fast access non-volatile memories (NVM) are under intense investigation to be integrated in Flip-Flops or computing memories to allow system power-off in standby state and save power. Spin Transfer Torque MRAM (STT-MRAM)(More)
Spin Transfer Torque Magnetic RAM (STT-MRAM) promises low power, great miniaturization prospective (e.g. 22 nm) and easy integration with CMOS process. It becomes actually a strong non-volatile memory candidate for both embedded and standalone applications. However STT-MRAM suffers from important failure and reliability issues compared with the conventional(More)
A type III secretion system (T3SS) in pathogenic Yersinia species functions to translocate Yop effectors, which modulate cytokine production and regulate cell death in macrophages. Distinct pathways of T3SS-dependent cell death and caspase-1 activation occur in Yersinia-infected macrophages. One pathway of cell death and caspase-1 activation in macrophages(More)
Spin transfer torque (STT) is one of the most promising switching approaches for magnetic tunnel junction (MTJ) nanopillars to build up innovative nonvolatile memory and logic circuits. It presents low critical current (e.g., A at 65 nm), simple switching scheme, and fast-speed; however, it suffers from a number of reliability issues like stochastic(More)
Magnetic tunnel junctions (MTJ) are considered as one of the most promising candidates for the next generation of nonvolatile memories and programmable logic chips. Spin transfer torque (STT) in CoFeB/MgO/CoFeB MTJs with perpendicular magnetic anisotropy (PMA) exhibits noticeable performance enhancements compared to that with In-plane magnetic anisotropy,(More)
The mechanism by which addictive drugs such as morphine regulate adult neurogenesis remains elusive. We now demonstrate that morphine can regulate neurogenesis by control of miR-181a and subsequent hippocampal neural progenitor cell (hNPC) lineages. In the presence of morphine, hNPCs preferentially differentiated into astrocytes, an effect blocked by the(More)
As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into(More)