Yuankai Liu

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High voltage HFET's fabricated from nitride semiconductors utilizing the AlGaN/GaN heterojunction demonstrate excellent RF performance with RF output power greater than an order of magnitude higher than available from GaAs and InP based devices. However, the nitride devices demonstrate a reliability problem where the dc current and RF output power(More)
Physics-based device models integrated into harmonic-balance microwave CAD simulators add flexibility and the ability to investigate both device and circuit design parameters before fabrication and prototyping. Accurate formulation of these models requires that relevant physical phenomena affecting the performance of these devices be identified and suitable(More)
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