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Natural Cellulose Nanofibers As Sustainable Enhancers in Construction Cement
Cement is one of the mostly used construction materials due to its high durability and low cost, but it suffers from brittle fracture and facile crack initiation. This article describes the use ofExpand
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Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs
Abstract Gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 110 nm and 220 nm, respectively. The gate recess was formed byExpand
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A Highly Parallel and Energy Efficient Three-Dimensional Multilayer CMOS-RRAM Accelerator for Tensorized Neural Network
It is a grand challenge to develop highly parallel yet energy-efficient machine learning hardware accelerator. This paper introduces a three-dimensional (3-D) multilayer CMOS-RRAM accelerator for aExpand
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Partial SOI power LDMOS with a variable low-k dielectric buried layer and a buried p-layer
A high voltage LDMOS on partial silicon-on-insulator (PSOI) with a variable low-k (relative permittivity) dielectric buried layer (VLKD) and a buried p-layer (BP) is proposed (VLKD BPSOI). In theExpand
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Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs
Abstract The impact of bulk traps in GaN buffer on the transient characteristics of AlGaN/GaN HEMTs is studied based on two-dimensional (2-D) numerical simulations. Starting from the calibration ofExpand
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Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection
In this Letter, we report large-area (600 μm diameter) 4H-SiC avalanche photodiodes (APDs) with high gain and low dark current for visible-blind ultraviolet detection. Based on the separateExpand
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Early age stability of concrete pavement by using hybrid fiber together with MgO expansion agent in high altitude locality
Abstract Serials of fibers with different elastic modules and MgO expansion agent (MEA) were used to enhance the volume stability of concrete pavement in high altitude localities. SimulationExpand
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Excellent-Performance AlGaN/GaN Fin-MOSHEMTs with Self-Aligned Al 2 O 3 Gate Dielectric
AlGaN/GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors (fin-MOSHEMTs) with different fin widths (300nm and 100 nm) on sapphire substrates are fabricated and characterized.Expand
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CMOS sub-THz on-chip communication with SRR modulator and SPP interconnect
Two novel metamaterial devices including Split Ring Resonator (SRR) modulator and Surface Plasmon Polariton (SPP) interconnect (including SPP T-line and coupler) are proposed with CMOS on-chipExpand
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Threshold voltage modulation mechanism of high-performance normally-off AlGaN/GaN gates-separating groove HFET
Abstract In this paper, we report on a novel enhancement-mode AlGaN/GaN gates-separating groove heterostructure field-effect transistor (GSG HFET), in which a block barrier exists between the doubleExpand
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