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Emerging photoluminescence in monolayer MoS2.
This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
Experimental observation of the quantum Hall effect and Berry's phase in graphene
An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.
Energy band-gap engineering of graphene nanoribbons.
- Melinda Y. Han, B. Ozyilmaz, Yuanbo Zhang, P. Kim
- Physics, Materials SciencePhysical review letters
- 22 February 2007
It is found that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.
Direct observation of a widely tunable bandgap in bilayer graphene
This work demonstrates a gate-controlled, continuously tunable bandgap of up to 250 meV and suggests novel nanoelectronic and nanophotonic device applications based on graphene that have eluded previous attempts.
Black phosphorus field-effect transistors.
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is…
Electric field effect tuning of electron-phonon coupling in graphene.
Gate-modulated low-temperature Raman spectra reveal that the electric field effect (EFE), pervasive in contemporary electronics, has marked impacts on long-wavelength optical phonons of graphene and demonstrate optically the particle-hole symmetry about the charge-neutral Dirac point.
Origin of spatial charge inhomogeneity in graphene
In an ideal graphene sheet, charge carriers behave as two-dimensional Dirac fermions 1 . This has been confirmed by the discovery of a half-integer quantum Hall effect in graphene flakes placed on a…
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2
It is found that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy, which opens up opportunities for potential voltage-controlled magnetoelectronics based on atomically thin van der Waals crystals.
Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene
Scanning tunnelling spectra of a graphene field-effect transistor reveal an unexpected tenfold increase in conductance as a result of phonon-mediated inelastic tunnelling. The honeycomb lattice of…
Gate-Variable Optical Transitions in Graphene
The strong and layer-dependent optical transitions of graphene and the tunability by simple electrical gating hold promise for new applications in infrared optics and optoelectronics.