• Publications
  • Influence
GdVO4 as a new medium for solid-state lasers: some optical and thermal properties of crystals doped with Cd3+, Tm3+, and Er3+ ions
The refractive indices of new Nd3+ : GdVO4, Tm3+ : GdVO4, and Er3+ : GdVO4 laser crystals were determined with an error of ±5×10-5 in the range 400–1100 nm. The birefringence of these crystals was onExpand
  • 159
  • 3
Continuous wave diode pumped intracavity doubled Nd:GdVO4 laser with 840 mW output power at 456 nm
Abstract We present a diode pumped Nd:GdVO4 ground-state laser at 912 nm with a maximum cw output power of nearly 2.1 W at 16.7 W pump power. The slope efficiency was 16% with respect to the incidentExpand
  • 160
Continous wave diode pumped Nd:GdVO4 laser at 912nm and intracavity doubling to the blue spectral range
A dioded pumped Nd:GdVO4 ground state laser at 912nm with a maximum output of 190mW at 1.2W pump power has been demonstrated. The slope efficiency was 24%. Intracavity SHG into the blue spectralExpand
  • 14
Diode-pumped lasers based on GdVO4 crystal
The results of this paper, as well as our previous results from research performed using spectroscopy and lasing, show that the GdVO 4 laser host has certain advantages over such laser hosts as YVO 4Expand
  • 37
Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm
A flash-lamp pumped passively mode-locked neodymium-doped vanadate lasers operated at 1.34 μm wavelength have been developed using a novel saturable absorber consisted of single-wall carbon nanotubesExpand
  • 114
Laser operation and spectroscopy of Tm: Ho: GdVO4
Abstract Laser operation on the Ho 5 I 7 - 5 I 8 2 μm transition in Tm: Ho: GdVO 4 is described, to our knowledge for the first time. This material has very strong and broad absorption bands, α =Expand
  • 28
Diode pumped 500-picosecond Nd:GdVO4 Raman laser
Self-Raman frequency conversion in a diode-pumped passively Q-switched Nd:GdVO4 laser has been demonstrated. The use of LiF:F2- crystal as a saturable absorber has provided effective Q-switching ofExpand
  • 82
Tm3+: GdVO4 — a new efficient medium for diode-pumped 2—μm lasers
An experimental investigation was made of the operational characteristics of a 2-μm ( λ =1923 nm) microlaser with a new efficient active medium in the form of a crystal of gadolinium vanadate Tm :Expand
  • 27
Thermal conductivity of a Tm3+:GdVO4 crystal and the operational characteristics of a microchip laser based on it
The thermal conductivity of a Tm3+:GdVO4 crystal was measured in the temperature range 50 — 300 K. At a temperature of 300 K, the thermal conductivity along the c axis amounted to 9.7 W m-1 K-1,Expand
  • 18
A diode-pumped 1.4-W Tm/sup 3+/:GdVO/sub 4/ microchip laser at 1.9 /spl mu/m
GdVO/sub 4/ as a host for thulium has several advantages for diode pumping in comparison with other crystals. The absorption cross section of thulium in GdVO/sub 4/ is considerably stronger andExpand
  • 25