Yu-Long Jiang

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In this paper, the etching of VO<sub>x</sub> thin film in the diluted HF solution is investigated. It's revealed that the etching can effectively influence the film resistance but with a constant temperature coefficient of resistance (TCR). It is demonstrated that the metallic components in VO<sub>x</sub> film will be etched off and the TCR is highly(More)
The effect of TiN capping layer on barrier inhomogeneities for TiSi<sub>x</sub>/n-Si Schottky diode is studied by temperature dependent current-voltage (I-V-T) measurements in this paper. The I-V-T curves from 90K to 310K show that the homogeneity of TiSi<sub>x</sub>/n-Si Schottky diode can be obviously influenced by TiN capping layer. A double Gaussian(More)
The pixel design of CMOS image sensor with large dynamic range of 71dB and high charge transfer efficiency by simulation is presented. The electron transfer efficiency of 100% can be obtained, which means all the electrons induced by illumination can be transferred to the floating drain. The influence of gate length and photodiode location on charge(More)
The scattering mechanisms are investigated for MOSFETs with gate length varying from 1000 nm to 32 nm in this paper. Although the carrier mobility should theoretically be independent on the gate length, using the universal mobility model it is found that as the gate length reduces the Coulombic scattering decreases while the phonon scattering and the(More)
In this paper the solar energy absorption characteristic of Si nanopillar (SiNP) array solar cell with metallic nanodiscs (NDs) is studied via simulation by finite-difference time-domain calculations. It seems that among the common metals including Au, Ag, Cu and Al, Cu is the best one for the enhancement of overall absorption. But it is further(More)
In this paper an automatic recoverable organic fuse composed of Au/Poly (3,4-ethylene-dioxy-thio-phene):poly(styrenesulfonate)(PEDOT:PSS)/Au structure is demonstrated. An off/on fuse resistance ratio of ~10<sup>3</sup> was observed. It is revealed that the switching off process is determined by the critical electric field intensity. But once the fuse(More)
In this work, the metal gate effective work function (EWF) modulation for the TiN/Ta/TiN/SiO<inf>2</inf>/p-Si(100) structure was investigated. Comparing with TiN/SiO<inf>2</inf>/p-Si(100) structure, after annealing the introduction of Ta can effectively reduce the flat band voltage. It is also revealed that although as the thermal budget increases the flat(More)
Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I&#x2013;V characteristic(More)
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical(More)