Yu-Long Jiang

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Carbides of refractory metals have been used as diffusion barriers due to their high melting point and good thermal and mechanical stability. In this work binary WC films have been investigated as Cu diffusion barriers by using ex-situ sheet resistance (Rs), X-ray diffraction (XRD) measurement and in-situ laser light scattering measurements. It was found(More)
In this paper, the etching of VO<sub>x</sub> thin film in the diluted HF solution is investigated. It's revealed that the etching can effectively influence the film resistance but with a constant temperature coefficient of resistance (TCR). It is demonstrated that the metallic components in VO<sub>x</sub> film will be etched off and the TCR is highly(More)
The properties of the ruthenium (Ru)/ TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), transmission electron microscopy (TEM) and electrical current leakage-voltage tests. Cu, Ru and TaN thin films were deposited(More)
In this paper the solar energy absorption characteristic of Si nanopillar (SiNP) array solar cell with metallic nanodiscs (NDs) is studied via simulation by finite-difference time-domain calculations. It seems that among the common metals including Au, Ag, Cu and Al, Cu is the best one for the enhancement of overall absorption. But it is further(More)
In this work, the metal gate effective work function (EWF) modulation for the TiN/Ta/TiN/SiO<inf>2</inf>/p-Si(100) structure was investigated. Comparing with TiN/SiO<inf>2</inf>/p-Si(100) structure, after annealing the introduction of Ta can effectively reduce the flat band voltage. It is also revealed that although as the thermal budget increases the flat(More)
Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I&#x2013;V characteristic(More)
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical(More)
The electrical properties of Ni (Pt)-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss distribution. It is demonstrated that the Pt interface layer can not only improve NiSi phase thermal stability but also improve contact homogeneity
Ni silicide and germanosilicide formation with one-step and two-step rapid thermal annealing are compared in this study. The 1st annealing temperature for NiSi and Ni(Si/sub 1-x/Ge/sub x/) in two-step annealing process are investigated with sheet resistance measurements, X-ray diffraction and Auger election spectroscopy. Cross-sectional SEM shows the(More)
We propose a new structure of Schottky rectifier, named trapezoid mesa trench MOS barrier Schottky rectifier (TM-TMBS). By 2D numerical simulations, both forward and especially better reverse I&#x2013;V characteristics, including higher breakdown voltage and lower leakage current, were demonstrated and explained comparing to regular TMBS as well as(More)