- Full text PDF available (1)
- This year (2)
- Last 5 years (10)
- Last 10 years (11)
Journals and Conferences
Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 μm wavelength range. Basic phase shifters require 700 mW of power for a 2π phase shift. The required power is brought down to 80 mW by complete undercut using focused ion beam. Finally an efficient thermo-optic phase shifter is demonstrated on the germanium on SOI platform. A tuning… (More)
In this letter, we describe the use of a germanium-on-silicon waveguide platform to realize an arrayed waveguide grating (AWG) operating in the 5 μm wavelength range, which can be used as a wavelength multiplexer for mid-infrared (midIR) light engines or as the core element of a midIR spectrometer. Ge-on-Si waveguide losses in the range 2.5-3.5 dB/cm… (More)
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticles and GeSn alloys on these circuits for… (More)
Strained Ge p-channel FinFETs on Strain Relaxed SiGe are reported for the first time, demonstrating peak transconductance gm<sub>SAT</sub> of 1.3mS/μm at V<sub>DS</sub>=-0.5V and good short channel control down to 60nm gate length. Optimization of P-doping in the SiGe, optimized Si cap passivation thickness on the Ge, and improved gate wrap of the… (More)
A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work… (More)
In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5.2 - 5.4 μm wavelength range. 3dB/cm waveguide losses and Mach-Zehnder interferometers with 20dB extinction ratio are presented.
A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si<sub>1-x</sub>Ge<sub>x</sub> surfaces.
The homogeneous broadening in Phosphorus doped Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter rHOM=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4.
Optical bleaching is studied on undoped and highly doped Ge layer on Si using Transient Absorption Spectroscopy. Upon optical pumping, doped Ge showed a reduction in optical bleaching as compared to undoped Ge due to the homogeneous broadening effect in doped Ge.
In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 μm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 μm wavelength range. The… (More)