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  • Takayuki Narushima, Tsuneaki Goto, Yoshio Yokoyama, Masahito Takeuchi, Yasutaka Iguchi, Toshio Hirai
  • Materials Science
  • 1994 (First Published: 1 April 1994)
  • Oxidation behavior of chemically vapor-deposited SiC in CO-CO[sub 2] atmospheres (0.1 MPa) was investigated using a thermogravimetric technique at temperatures from 1,823 to 1,923 K. Active orContinue Reading
  • Takayuki Narushima, Tsuneaki Goto, Yoshio Yokoyama, Jun Hagiwara, Yasutaka Iguchi, Toshio Hirai
  • Materials Science
  • 1994 (First Published: 1 September 1994)
  • The oxidation behavior of chemically vapor-deposited silicon nitride in N2–O2 and Ar–O2 atmospheres was studied using a thermogravimetric technique at temperatures 1823 to 1923 K. Active oxidationContinue Reading