Yoshio Nishi

Szu-Lin Cheng6
Jesse Lu4
Gary Shambat3
Maria Makarova2
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Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600 °C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical(More)
We fabricate and optically characterize germanium microdisks formed out of epitaxial germanium grown on silicon. Resonators coupled to fiber tapers display clear whispering gallery modes in transmission and photoluminescence with quality factors limited by germanium's material absorption. Continuous wave pumping of the cavities resulted in a dominant(More)
We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a(More)
An oxygen-assisted hydrocarbon chemical vapor deposition method is developed to afford large-scale, highly reproducible, ultra-high-yield growth of vertical single-walled carbon nanotubes (V-SWNTs). It is revealed that reactive hydrogen species, inevitable in hydrocarbon-based growth, are damaging to the formation of sp(2)-like SWNTs in a diameter-dependent(More)
Outline • Emerging nonvolatile memories • Switching behaviors metal sulfides and metal oxides • Device applications nonvolatile memory and nonvolatile logic • Phenomenological behaviors • Physical mechanisms • Scalability • Summary Motivations for new nonvolatile memory research • Scalability limit beyond 32nm nodes of existing memory both volatile memory(More)
We report the room temperature electroluminescence (EL) at 1.6 microm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve(More)
  • Yiyang Gong, Jesse Lu, Szu-Lin Cheng, Yoshio Nishi, Jelena Vučkovi´c
  • 2009
Plasmonic gratings of different periodicities are fabricated on top of Silicon nanocrystals embedded in Silicon Dioxide. Purcell enhancements of up to 2 were observed, which matches the value from simulations. Plasmonic enhancements are observed for the first three orders of the plasmonic modes, with the peak enhancement wavelength varying with the(More)
—Efficient silicon (Si)-compatible emitters can realize inexpensive light sources for a variety of applications. In this paper, we study both photonic crystal (PC) and plasmonic nanocavities that enhance the emission of Si-compatible materials. In particular , we examine the coupling of silicon nanocrystals (Si-NCs) to silicon nitride PC cavities and Si-NCs(More)
The authors have demonstrated an up to sevenfold enhancement of photoluminescence from silicon-rich silicon nitride film due to a single photonic crystal cavity. The enhancement is partially attributed to the Purcell effect ͓Purcell, Phys. Rev. 69, 681 ͑1946͔͒, which is predicted to be up to 35-fold by finite difference time-domain calculations for emitters(More)