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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Abstract: Electrically pumped lasing from Germanium-on-Silicon pnn(More)
We fabricate and optically characterize germanium microdisks formed out of epitaxial germanium grown on silicon. Resonators coupled to fiber tapers display clear whispering gallery modes in transmission and photoluminescence with quality factors limited by germanium's material absorption. Continuous wave pumping of the cavities resulted in a dominant(More)
We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a(More)
The authors have demonstrated an up to sevenfold enhancement of photoluminescence from silicon-rich silicon nitride film due to a single photonic crystal cavity. The enhancement is partially attributed to the Purcell effect ͓Purcell, Phys. Rev. 69, 681 ͑1946͔͒, which is predicted to be up to 35-fold by finite difference time-domain calculations for emitters(More)
Plasmonic gratings of different periodicities are fabricated on top of Silicon nanocrystals embedded in Silicon Dioxide. Purcell enhancements of up to 2 were observed, which matches the value from simulations. Plasmonic enhancements are observed for the first three orders of the plasmonic modes, with the peak enhancement wavelength varying with the(More)
We report the room temperature electroluminescence (EL) at 1.6 microm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve(More)
—Efficient silicon (Si)-compatible emitters can realize inexpensive light sources for a variety of applications. In this paper, we study both photonic crystal (PC) and plasmonic nanocavities that enhance the emission of Si-compatible materials. In particular , we examine the coupling of silicon nanocrystals (Si-NCs) to silicon nitride PC cavities and Si-NCs(More)
Time-dependent dielectric breakdown (TDDB) is a major concern for low-k organosilicate dielectrics. To examine the effect of plasma exposure on TDDB degradation, time-to-breakdown measurements were made on porous SiCOH before and after exposure to plasma. A capillary-array window was used to separate charged particle and vacuum ultraviolet (VUV) photon(More)
Vacuum ultraviolet ͑VUV͒ spectroscopy is used to determine the valence-band structure and location of defect states within the bandgap of porous organosilicate ͑SiCOH͒ dielectrics both before and after VUV and UV irradiation. SiCOH dielectrics have bandgap energies of about 9 eV. In addition, positive charge is trapped by defect states located 1 eV above(More)
Vacuum ultraviolet (VUV) photoemission spectroscopy is used to investigate the effect of VUV radiation on porous organosilicate (SiCOH) dielectrics during plasma processing. By comparing photoemission spectroscopic results before and after VUV exposure, VUV irradiation with photon energies less than 9.0 eV was found to be beneficial in depleting accumulated(More)