Yoshiki Tsujihashi

  • Citations Per Year
Learn More
A 512-Kbit SRAM using dual threshold voltage transistors has been fabricated. The memory cells are composed of high-threshold voltage transistors and cutting off the power supply to the peripheral(More)
A 2-read/write dual-port SRAM and 1-read/1-write two-port SRAM with stable operation at temperatures of -40 to 170°C are implemented in 40 nm embedded flash CMOS technology for automotive(More)
  • 1