Yoshiki Nagatomo

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We have been developing the 0.2 μm fully-depleted Silicon On Insulator (SOl) CMOS technology for monolithic pixel detectors. In order to improve the sensor's sensitivity, 8 inch FZ wafer is introduced for handle substrate in SO! wafer. Stitching technology is also developed to get large detector chip area. Furthermore, nested well structure for the(More)
Today, various specifications are demanded to LSI, which is indispensable for industry and our life. For example, in the field of mobile equipments, watch and sensor devices in ubiquitous network, low-power-consumption devices are required. On the other hand, in the field of high-end processing, high performance devices are required. Silicon-on-insulator(More)
We report for the first time the successful integration of strontium-bismuth-tantalate ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors do not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the(More)
This paper presents the optimization of the two bit flash memory P-channel cell structure using efficient 2D write and erase model. Our proposed cell structure stores charge at either Source and/or Drain sides of the gate in an SiN film and is based on method of programming by DAHE and erasing by FN tunneling. It is found that expansion of cell window and(More)
We report for the first time the successful integration of strontium-bismuth-tantalate (SBT) ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding fully depleted silicon on insulator (FD-SOI) transistors, and, conversely, we have verified(More)
Silicon-On-Quartz (SOQ) technology, which can miniaturize, and/or weight-save liquid crystal display, has a great promising technology for next generation mobile display of cell phone, near eye display, pico-projector, and view finder. Recently, mass production for compact liquid crystal display has started and many developments for that panel improvement.(More)
The superior characteristics of variable body-factor (γ) FD SOI MOSFETs which we have recently proposed are experimentally demonstrated. Devices were fabricated on a SOI wafer with BOX thickness of 10 nm by using the 140 nm technology. Their advantages, small leakage-current in the standby-state and improved delay in the active-state, are clearly(More)
This paper reports recent results of a direct-detection X-ray CMOS image sensor for X-ray Free-Electron Laser (XFEL) experiments. The sensor incorporates the in-pixel dual gain circuitry by using Fully Depleted-Silicon-On-Insulator (FD-SOI) CMOS transistors located on top of the buried oxide (BOX) layer. Beneath of the BOX layer, high resistivity handle(More)
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