Yongxun Liu

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The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al 2 O 3 and SiO 2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (V t) variability, and the memory characteristics have been comparatively(More)
SUMMARY Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to achieve flexible V th adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.
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