YongHa Kang

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Article history: Received 11 September 2015 Received in revised form 16 December 2015 Accepted 10 January 2016 Available online xxxx This paper proposes amethodwhich can separate the parasitic effect from the drain current Id vs. gate voltage Vg curves of MOSFETs, then uses this method to analyze degradation of experimental pMOSFETs due to(More)
Article history: Received 30 June 2016 Accepted 8 July 2016 Available online xxxx Channel width dependence of AC stress was investigated. OFF-state stress generated negative interface traps, positive oxide charges, and neutral traps in the whole channel region. Comparison of drain currents of parasitic and main MOSFET during OFF-state indicates that more(More)
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