YongHa Kang

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Article history: Received 11 September 2015 Received in revised form 16 December 2015 Accepted 10 January 2016 Available online xxxx This paper proposes amethodwhich can separate the parasitic effect from the drain current Id vs. gate voltage Vg curves of MOSFETs, then uses this method to analyze degradation of experimental pMOSFETs due to(More)
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