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A low conversion-loss monolithic frequency doubler has been developed for D-band signal generation in 0.13-μm SiGe BiCMOS technology. The circuit uses a single-transistor topology with a novel grounded-shielding structure, which can efficiently reduce the parasitic feedback effect between collector and base of a HBT to achieve frequency(More)
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In modern CMOS technologies, metal dummy fills are required to maintain metal density uniformity and to planarize the layers. As frequency increases, the effect of the metal dummy fills on the CMOS integrated circuits or components should be taken into account. This work presents experimental results of the effect of metal dummy fills on the microwave(More)
The purpose of this paper is to address the issues of deembedding multigigahertz CMOS measurements by extensively comparing six popular methods and by proposing a new method based on two-port measurements. The comparison aims to evaluate the maximum applicable frequency of equivalent-circuit methods (open-short, three step, ...) and the effect of the source(More)
This paper proposes a new 60-GHz single-pole-double-throw (SPDT) switch. It is designed in a 1.2-V 130-nm bulk CMOS and has a small core area of 222 μm × 92 μm. The switch exhibits measured insertion loss of 1.7 dB, isolation of 22 dB, input return loss of 20 dB, output return loss of 14 dB, and simulated power-handling capability of(More)
This paper proposes a new n-network-based single-pole-four-throw (SP4T) switch with inherent ESD protection for 60-GHz applications, which achieves a small core area of 274 (im × 262 (im with a 1.2-V 65-nm bulk CMOS RF process. At 60 GHz, the proposed switch exhibits a simulated performance of 3.4-dB insertion loss, 25.7-dB isolation between Ant 1(More)