Yong Woo Jeon

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The amorphous oxide thin-film transistor (TFT)-oriented simulator [subgap Density of states (DOS)-based Amorphous Oxide TFT Simulator (DeAOTS)] is proposed, implemented, and demonstrated for amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs. It only consists of parameters having their physical meanings and is supplied with concrete techniques for parameter(More)
The effect of the active layer thickness (<i>T</i><sub>IGZO</sub>) on the negative bias stress (NBS)-induced threshold voltage shift (&#x0394;<i>VT</i>) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative &#x0394;<i>VT</i> in a-IGZO TFT with a(More)
The effect of O<sub>2</sub> flow rate (OFR) during channel deposition is investigated on the electrical instability of the amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under positive gate bias stresses. From the transfer curves measured before and after bias stresses, we can observe that the high OFR degrades the electrical(More)
In this letter, we show that the physics-based equation that was derived for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) in our previous work can be successfully incorporated into the SPICE model via Verilog-A. The proposed model and extracted SPICE parameters successfully reproduce the measured current-voltage characteristics of(More)
We propose a novel 4-bit self-aligned SONOS-type nonvolatile memory (NVM) cell with a T-gate and I-shaped FinFET structure for practical implementation with high storage density and better reliability. In order to obtain enhanced reliability characteristics, a modified Fowler-Nordheim tunneling mechanism is employed for programming along the channel length(More)
The top-source noncoplanar diagonal electrode (TS-NDE) structure was fabricated and simulated with the oxide channel layer. The structure exhibits enhanced stability and low subthreshold swing with higher mobility than those of bottom-source electrode structure thin-film transistors (TFTs). Interestingly, in this highly stable TS-NDE, the current density(More)
The effect of the active layer thickness (TIGZO) on the negative bias illumanation stress (NBIS)-induced threshold voltage shift (∆VT) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states-based simulator (DeAOTS). The NBIS-induced ∆VT in a-IGZO TFT with a thinner TIGZO is negatively(More)
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