Yo-Sheng Lin

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Design principles of CMOS low-noise amplifiers (LNAs) for simultaneous input impedance and noise matching by tailoring device size for R/sub opt/=50 /spl Omega/ are introduced. It is found that R/sub opt/ close to 50 /spl Omega/ can be obtained by using small devices (110 /spl mu/m) and small currents (5 mA). Based on the proposed approach, CMOS LNAs with(More)
Selective removal of the silicon underneath the inductors in RF integrated circuits based on inductively coupled plasma (ICP) deep trench technology is demonstrated by a complementary metal-oxide-semiconductor (CMOS) 5-GHz low-noise amplifier (LNA) and a 4-GHz voltage-controlled oscillator (VCO). Design principles of a multistandard LNA with flat and low(More)
Ga/sub 0.51/In/sub 0.49/P/GaAs MISFET's, where a Ga/sub 0.51/In/sub 0.49/P insulator layer was inserted between the gate metal and the channel layer, were compared with MESFET's experimentally and theoretically in terms of dc and microwave performance. Devices performance were evaluated by varying the thickness of insulating layer. Wide and flat(More)
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