Yisong Han

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Nonand semipolar GaN have great potential to improve the efficiency of light emitting devices due to much reduced internal electric fields. However, heteroepitaxial GaN growth in these crystal orientations suffers from very high dislocation and stacking faults densities. Here, we report a facile method to obtain low defect density nonand semipolar(More)
We report on the growth of semi-polar GaN (112̄2) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layers were deposited. Total thicknesses up to 5 m were realised without cracks(More)
The rational design of transition metal dichalcogenide electrocatalysts for efficiently catalyzing the hydrogen evolution reaction (HER) is believed to lead to the generation of a renewable energy carrier. To this end, our work has made three main contributions. At first, we have demonstrated that exfoliation via ionic liquid assisted grinding combined with(More)
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