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Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPy quantum wells for laser applications
GaAs1−zBiz/GaAs1−yPy strained-compensated quantum well (QW) structures for laser applications were grown by metalorganic vapor phase epitaxy. The band offsets for the GaAs1−zBiz/GaAs1−yPyExpand
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Atomic Layer Deposition of Al2O3-Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-Ion Battery.
Metal oxide coatings can improve the electrochemical stability of cathodes and hence, their cycle-life in rechargeable batteries. However, such coatings often impose an additional electrical andExpand
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Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1−yBiy
Abstract Theoretical and experimental studies have confirmed that the GaAs1−yBiy semiconductor alloy system has potential for long wavelength applications and devices with improved performance overExpand
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Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy
We investigate the change of the valence band energy of GaAs1-xBix (0<x<0.025) as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in theExpand
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Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs 1-x Bi x /GaAs superlattice
Abstract The three-dimensional distribution of Bi atoms in a GaAs 1− x Bi x /GaAs superlattice grown by metalorganic vapor phase epitaxy (MOVPE) was studied using atom probe tomography (APT). The BiExpand
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Reliability of a portable device for quantifying tone and stiffness of quadriceps femoris and patellar tendon at different knee flexion angles
The reliability of MyotonPRO that can monitor the mechanical properties of tissues is still unclear. This study aimed to analyze the within-day inter-operator and between-day intra-operatorExpand
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Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging
A set of GaAs1−xBix/GaAs multilayer quantum-well structures was deposited by metal-organic vapor phase epitaxy at 390 °C and 420 °C. The precursor fluxes were introduced with the intent of growingExpand
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Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics
Abstract GaAs 1− x Bi x /GaAs multiple quantum well heterostructures were grown by organo-metallic vapor phase epitaxy (OMVPE) at low temperatures and were subsequently in-situ annealed under anExpand
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Tungsten hexacarbonyl and hydrogen peroxide as precursors for the growth of tungsten oxide thin films on titania nanoparticles
W(CO)6 and H2O2 were used in an atomic layer deposition (ALD)-like process to grow thin WOx films onto TiO2 powders in a fluidized bed reactor. Carbonyl precursors are not widely used in thisExpand
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Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1-x Bi x explored by atom probe tomography and HAADF-STEM.
The effects of a 45 min anneal at 800 °C on the physical properties and microstructure of a five-period GaAs1-x Bi x /GaAs1-y Bi y superlattice with y ≠ x were studied using room-temperatureExpand
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