Ying-Zong Juang

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This paper presents the on-chip transmission line modeling and applications to circuit design at millimeter-wave (ram-wave) frequencies. The microstrip model of circuit simulators benefits in fast calculations of the characteristics of microstrip lines. As the structure of on-chip microstrip differs from the modeled structure, two key parameters of the(More)
A 2.4-5.4-GHz CMOS reconfigurable low-noise amplifier (LNA) is designed. It consists of two stages: a broadband input stage for a steady input matching and noise performance, and a reconfigurable band-selective stage which provides a wide-range frequency tuning from 2.4 to 5.4 GHz and a 12-dB stepped gain with linearity adjustment. The frequency tuning is(More)
This paper reports on the impact of shallow-trench isolation (STI) on flicker noise characteristics in 0.13-μm RF nMOSFETs. The drain noise current spectral density was measured in both triode and saturation regions for a more complete study. The devices with a relatively small finger width and a large finger number (W = 1 μm/Nfinger = 40 and W = 5(More)
A high-gain gate-pumped down-conversion mixer at 60 GHz is realized in a standard 90-nm CMOS process. The proposed mixer adopted a Darlington cell and a microstrip-line Lange coupler to yield wide 3-dB bandwidth from 5 to 65 GHz. The measured performance demonstrates a conversion gain (CG) of 6 dB at 4.2-mW power consumption. The maximum CG is 6.5 dB at 36(More)