Ying-Bing Jiang

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Nanoscale spatial phase modulation of GaN grown on a 355-nm period array of V-grooves fabricated in a Si(001) substrate is reported. Orientation-dependent selective nucleation of GaN in metal-organic vapor phase epitaxy begins from the opposing Si{111} sidewalls and rapidly fills each V-groove. At the initial stages of growth, the GaN deposited on the(More)
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