Yin-Cheng Chang

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A fully integrated receiver front-end for very small aperture terminal (VSAT) applications in a 0.18-μm SiGe BiCMOS technology is demonstrated. To satisfy different specifications of various applications, the proposed receiver can down-convert the input signal in a wide RF range from 9.8 to 14.8 GHz to the IF frequency at L-band (950-2150MHz) with(More)
A fully integrated Ku-band down-converter front-end for digital broadcast satellite (DBS) receiver in a 0.18 Ilm SiGe BiCMOS technology is presented. To meet the specifications in different areas, the circuit can cover a wide RF range (10.7-13.45 GHz) with four LO frequencies, and down convert the RF signal to L-Band (950-2150 MHz). Compared with previous(More)
The direct RF power injection (DPI) measurement up to 18 GHz is proposed to investigate the IC immunity. The DPI method is reviewed and the consideration of extending frequency range is discussed. Furthermore, the details of the measurement setup are depicted in this work. The critical part, on-board injection network in the power injection path with a 3 dB(More)
The title complex, [Nd(2)(C(8)H(3)NO(6))(2)(C(8)H(4)NO(6))(2)(H(2)O)(6)]·2H(2)O, consists of dimeric units related by an inversion center. The Nd(III) atom is nine-coordinated by three O atoms from water mol-ecules and six from carboxyl-ate atoms. The 1,2-dicarboxylate acid molecules are in a single and double deprotonation stage and exhibit two(More)
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