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Radiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values. Once the total radiation dose goes beyond the top value of the window, the switching ability reappears. A physical(More)
XFET references make up a new kind of voltage references different from the popular band-gap or buried Zener devices. These references are built by means of a reference cell consisting of a couple of p-channel junction field effect transistors with different pinch-off voltage values and an operational amplifier for the purpose of improving the output(More)
Power operational amplifiers were irradiated in a mixed neutron and gamma radiation environment. These experiments showed that the degradation of the power operational amplifiers shares a great deal of characteristics with that of the low signal devices (e.g., shift of the input offset voltage, increase of the input bias currents, and degradation of the(More)
The frequency behavior of a bipolar operational amplifier (op amp) is always expected to worsen when the device is irradiated. In other words, parameters like the slew rate and the gain-bandwidth product are to decrease after either neutron or gamma tests. However, some neutron and TID tests performed on a large variety of bipolar op amps have shown that(More)
Radiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON & OFF states if the total radiation dose is placed between two characteristics values. Oddly, once the total radiation dose goes beyond the top value of the window, the switching ability reappears. A(More)
Radiation tests on CMOS analog switches were carried out in order to select the most tolerant device for future use in the cryogenic system of the CERN large hadron collider. After irradiation, the devices showed some interesting changes related to the power supplies: an increase in the lowest supply voltage capable of biasing correctly the devices; some(More)
The frequency behaviour of irradiated bipolar op amps is always expected to worsen when the device is irradiated. In other words, parameters like the slew rate and the gain-bandwidth product are to decrease after either neutron or gamma tests. However, some neutron and TID tests performed on a large variety of bipolar op amps have shown that the evolution(More)
Commercial-off-the-shelf (COTS) capacitor-based isolation amplifiers were irradiated at the Portuguese Research Reactor (PRR) in order to determine its tolerance to the displacement damage and total ionising dose (TID). The set of experimental data shows that some of these devices are suitable for zones inside future nuclear facilities where the expected(More)
This paper describes the evolution of different commercial microprocessor supervisory circuits under neutron and gamma radiation. After the irradiation, the tested devices showed some interesting changes: an increase of supply current and the period of watchdog timer. It was also observed that threshold voltage hysteresis and the shift of TTL trigger level(More)