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We reported characteristics of 20nm PRAM cell. Optimization of diode integration process and improved implantation technology were used to satisfy the required diode on-current (Ion) with low off-current (Ioff). Confined cell structure and novel bottom electrode (BE) materials were developed to reduce a reset current (Ireset) below 100uA. Using the advanced(More)
This paper proposes the Fuzzy-DEVS formalism which generalizes the original DEVS formalism by adapting fuzzy set theory. Since the DEVS formalism has four characteristic functions deened on crisp sets the Fuzzy-DEVS formalism generalizes the functions on fuzzy sets. By deening the functions on fuzzy sets, internal and external transitions of Fuzzy-DEVS can(More)
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