Yi-Lung Cheng

  • Citations Per Year
Learn More
In this paper, we attempt to combine short length and via number effects to study the impact on the electromigration (EM) characteristics of dual damascene Cu lines. The results revealed interesting differences in electromigration behaviours of long and short length Cu lines. Increasing via number resulted in a higher electromigration failure time, but is(More)
Electromigration in Cu dual damascene interconnections has been investigated in terms of metal line width and thickness. The failure lifetime was found to decrease with decreasing line thickness and width. Furthermore, electromigration lifetime was greatly decreased as the line width was decreased to 0.07 m width. In addition to interface diffusion, the(More)
The sub-micron damascene interconnects, electromigration is mainly due to the diffusion at the interfaces of Cu with liner or dielectric capping layer. Many reports have shown that Cu/capping dielectric is the dominant interface. Experiments were performed to study the effect of the interfacial conditions of Cu/capping dielectric material on(More)
  • 1