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—In this paper, high-speed traveling-wave elec-troabsorption modulators (TW-EAMs) with strain-compensated InGaAsP multiple quantum wells as the absorption region for analog optical links have been developed. A record-high slope efficiency of 4/V, which is equivalent to a Mach–Zehnder modu-lator with a of 0.37 V and a high extinction ratio of 30 dB/V have(More)
Wireless location is to determine the position of the mobile station (MS) in wireless communication networks. Due to the measurements with large errors, location schemes give poorer performance in non-line-of-sight (NLOS) environments. This paper illustrates methods to integrate all the available heterogeneous measurements to achieve more accurate location(More)
—High-performance InGaAsP–InP multiple-quantum-well traveling-wave electroabsorption modulators (EAMs) have been developed for analog optical links. A high slope efficiency of 4/V at 1.55 m for a 300-m-long EAM is measured. A detailed study of the nonlinearity and the spurious-free dynamic range (SFDR) is presented. By optimizing the bias voltage and the(More)
High speed, high efficiency, low noise and high saturation power are the characteristics desired for detectors in high bit-rate long-haul optical communication systems. We present the modeling of Traveling-wave Amplification Photodetectors (TAP detectors). These novel monolithic devices combine optical gain and absorption in a distributed fashion along a(More)
A degenerate four-wave-mixing (FWM) operation in the Ta2O5 submicrometer channel waveguide has been successfully demonstrated. The propagation loss of 1.5  dB/cm and total insertion loss of 5.1 dB are realized in a 12.6 mm long waveguide with inverse taper structure. The wavelength and quadratic pumping power-dependent measurements on optical transmission(More)
We have developed thin film heaters/sensors that can be integrated on top of superlattice microcoolers to measure the Seebeck coefficient perpendicular to the layer. In this paper, we discuss the Seebeck coefficients of InGaAs/InAlAs superlattices grown with Molecular Beam Epitaxy (MBE) that have different doping concentrations, varying between 2e18, 4e18,(More)