Yevgeniy S. Puzyrev

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Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of Dirac fermions. An attractive approach to increase the mobility is to place graphene in an environment with high static dielectric constant κ that would screen the electric field due to the charged(More)
Graphene has become one of the most promising materials for future optoelectronics due to its ultrahigh charge-carrier mobility, high light transmission, and universal absorbance in the near-infrared and visible spectral ranges. However, a zero band gap and ultrafast recombination of the photoexcited electron-hole pairs limit graphene's potential in(More)
The search for optimal thermoelectric materials aims for structures in which the crystalline order is disrupted to lower the thermal conductivity without degradation of the electron conductivity. Here we report the synthesis and characterisation of ternary nanoparticles (two cations and one anion) that exhibit a new form of crystalline order: an(More)
Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. We explore the consequences of this crumpling on the effective mechanical constants of graphene. We develop a sensitive experimental approach to probe stretching of graphene membranes under low applied stress at cryogenic to room(More)
We report the experimental data, quantummechanical calculations, and engineering-level modeling that provide insight into the atomic-scale processes that underlie the hot-electron degradation of AlGaN/GaN high-electron-mobility transistors during electrical stress at moderate drain bias. There is relatively large degradation (up to 20%) of the peak(More)
Oxygen-related border traps cause low-frequency excess (1/f) noise in MOS transistors with SiO<sub>2</sub> gate dielectrics and GaN/AlGaN HEMTs. In each case, the noise is associated with a reconfiguration of the microstructure of near-interfacial defects upon charge capture. O vacancies in the near-interfacial SiO<sub>2</sub> capture electrons when Si-Si(More)
We present a theoretical study of the thermoelectric efficiency of "interlaced crystals", recently discovered in hexagonal-CuInS2 nanoparticles. Interlaced crystals are I-III-VI2 or II-IV-V2 tetrahedrally bonded compounds. They have a perfect Bravais lattice in which the two cations have an infinite set of possible ordering patterns within the cation(More)
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