Yeow Kheng Lim

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A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed to be due to the ability of the side reservoir to “trap” migrating pre-existing voids before they reach the cathode end. The ability of the side reservoir to ‘trap’(More)
Wafer level Isothermal (ISOT) test is a highly accelerated test for interconnect electromigration (EM) evaluation, giving benefits of shorter test time and cost savings. Activation energy and physical failure modes of ISOT tests are determined for Copper (Cu) damascene lines. Comparisons are made with long term package level EM test in these aspects,(More)
In this paper, investigation of wire bonding, bumping and assembly related failures are performed using optical microscopy, secondary electron microscopy and transmission electron microscopy. Also, the understandings of the failures and root causes are presented. For example, corrosions caused by contaminant such as Fluorine and Cu precipitates on Al-Cu(More)
The broad time-to-failure distribution and bimodality of downstream electromigration (EM) in 45nm technology node are investigated. Liner void and end of line void at wafer edge on downstream EM structure after M1 CMP is a clear physical vapor deposition (PVD) shadowing effect signature caused by poor liner gap fill capability. Furthermore, void growth(More)
An overview of the semiconductor roadmap of interconnects process transition from 0.13mum to 45nm using current proven state- of-the-art manufacturing technology in relation to the integration of dielectric material progressing from fluorinated silica glass to porous low-k will be discussed. Key challenges of process integration with shrinking dimension to(More)
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