Yenting Lin

Learn More
Uniform GaN nanorod arrays are grown vertically by selective area growth on (left angle bracket 0001 right angle bracket) substrates. The GaN nanorods present six nonpolar {1⁻100} facets, which serve as growth surfaces for InGaN-based light-emitting diode quantum well active regions. Compared to growth on the polar {0001} plane, the piezoelectric fields in(More)
  • O Lupan, T Pauporté, B Viana, P Aschehoug, M Ahmadi, B Roldan Cuenya +3 others
  • 2013
The preparation of efficient light emitting diodes requires active optical layers working at low voltage for light emission. Trivalent lanthanide doped wide-bandgap semiconducting oxide nanostructures are promising active materials in opto-electronic devices. In this work we report on the electrochemical deposition (ECD) of Eu-doped ZnO (ZnO:Eu) nanowire(More)
In this paper we report the first observation, through X-ray diffraction, of noncovalent uracil–uracil (U–U) dimeric π-stacking interactions in carbon nanotube (CNT)–based supramolecular assemblies. The directionally oriented morphology determined using atomic force microscopy revealed highly organized behavior through π-stacking of U moieties in a(More)
  • 1